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| PMK27XP P-channel extremely low level FET M3D315 Rev. 01 -- 15 January 2004 Product data 1. Product profile 1.1 Description Extremely low level P-channel enhancement mode field-effect transistor in a plastic package using TrenchDMOS technology. 1.2 Features s Low threshold s Low on-state resistance. 1.3 Applications s Load switching s Laptop computers s Battery packs s Battery powered portable equipment. 1.4 Quick reference data s VDS -20 V s Ptot 2.5 W s ID -6.5 A s RDSon = 27 m (typ). 2. Pinning information Table 1: Pin 1,2,3 4 5,6,7,8 Pinning - SOT96-1 (SO-8), simplified outline and symbol Description source (s) gate (g) drain (d) g 1 Top view 4 MBK187 Simplified outline 8 5 Symbol d s MBB075 SOT 96-1 (SO-8) 3. Ordering information Table 2: Ordering information Package Name PMK27XP S08 Description Plastic surface mounted package; 8 leads Version SOT96-1 Type number Philips Semiconductors PMK27XP P-channel extremely low level FET 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS ID drain-source voltage (DC) drain current Conditions Tamb = 25 C VGS = -4.5 V; tp < 10s Tamb = 25 C; Figure 2 Tamb = 70 C; Figure 2 VGS = -4.5 V; tp > 10s Tamb = 25 C; Figure 2 Tamb = 70 C; Figure 2 VGS IDM Ptot Ptot Tstg Tj IS gate-source voltage (DC) peak drain current total power dissipation total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tamb = 25 C Tamb = 25 C; pulsed; tp 300 s; Figure 3 Tamb = 25 C; tp < 10s; Figure 1 Tamb = 25 C; tp > 10s; Figure 1 -55 -55 -4.6 -3.7 -12 -32 2.5 1.25 +150 +150 -1.7 A A V A W W C C A -6.5 -5.2 A A Min Max -20 Unit V Source-drain diode 9397 750 11549 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev. 01 -- 15 January 2004 2 of 11 Philips Semiconductors PMK27XP P-channel extremely low level FET 120 Pder (%) 80 03an63 120 Ider % 03an62 80 40 40 0 0 50 100 Tamb (C) 150 0 0 50 100 Tamb C 150 P tot P der = ---------------------- x 100% P tot ( 25 C ) ID I der = ------------------- x 100% I D ( 25 C ) Fig 1. Normalized total power dissipation as a function of solder point temperature. Fig 2. Normalized continuous drain current as a function of solder point temperature. 102 ID (-A) 10 tp = 100 s 1 ms 10 ms 1 DC 100 ms Limit RDSon = VDS / ID 03an64 10-1 10-2 10-1 1 10 VDS (-V) 102 Tamb = 25 C; IDM is single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 11549 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev. 01 -- 15 January 2004 3 of 11 Philips Semiconductors PMK27XP P-channel extremely low level FET 5. Thermal characteristics Table 4: Symbol Rth(j-sp) Thermal characteristics Parameter Conditions minimum footprint; mounted on a printed-circuit board steady state tp < 10 s 100 50 K/W K/W Min Typ Max 27 Unit K/W thermal resistance from junction to solder point Figure 4 Rth(j-amb) thermal resistance from junction to ambient 5.1 Transient thermal impedance 1 03an61 a = 0.5 0.2 10-1 0.1 0.05 P 0.02 Single Pulse 10-2 10-4 tp T 10-2 10-1 102 = tp T t 10-3 1 10 tp (s) 103 Z th ( j - amb ) a = -------------------------R th ( j - amb ) Fig 4. Normalised transient thermal impedance from junction to ambient as a function of pulse duration. 9397 750 11549 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev. 01 -- 15 January 2004 4 of 11 Philips Semiconductors PMK27XP P-channel extremely low level FET 6. Characteristics Table 5: Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IGSS RDSon gate-source threshold voltage drain-source leakage current gate-source leakage current drain-source on-state resistance ID = -250 A; VGS = 0 V ID = -250 A; VDS = VGS; Figure 9 VGS = 0 V; VDS = -20 V VGS = 0 V; VDS = -16 V; Tj = 70 C VGS = 12 V; VDS = 0 V VGS = -4.5 V; ID = -6.5 A; Figure 7 and 8 VGS = -2.5 V; ID = -5 A; Figure 7 and 8 Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain (diode forward) voltage IS = -6.5 A; VGS = 0 V; Figure 11 VDD = -15 V; ID = -6.5 A; VGS = -4.5 V; RG = 6 VGS = 0 V; VDS = -10 V; f = 1 MHz; Figure 10 ID = -6.5 A; VDD = -15 V; VGS = -4.5 V; Figure 12 13.6 2.3 5.5 1044 273 211 10 35 38 50 -1.5 nC nC nC pF pF pF ns ns ns ns V -20 -0.6 27 46 -1 -5 100 35 60 V V A A nA m m Conditions Min Typ Max Unit Source-drain diode 9397 750 11549 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev. 01 -- 15 January 2004 5 of 11 Philips Semiconductors PMK27XP P-channel extremely low level FET 40 -4.5 V ID (-A) 30 -5 V -4 V -3.5 V 03am04 32 ID (-A) 24 03am06 -3 V 20 -2.5 V 16 10 -2 V VGS = -1.5 V 8 125 C 0 25 C -55 C 0 0 1.5 3 VDS (-V) 4.5 0 1.5 3 VGS (-V) 4.5 Tj = 25 C Tj = -55 C, 25 C and 125 C; VDS > ID x RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 60 RDSon (m ) 40 -2.5 V 03am05 1.6 a 1.2 03an41 0.8 VGS = -4.5 V 0.4 20 0 0 4 8 ID (-A) 12 0 -100 0 100 Tj (C) 200 Tj = 25 C R DSon a = ---------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Fig 7. Drain-source on-state resistance as a function of drain current; typical values. 9397 750 11549 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev. 01 -- 15 January 2004 6 of 11 Philips Semiconductors PMK27XP P-channel extremely low level FET 0 VGS(th) (-V) 0.4 03an42 1800 C (pF) 1200 Ciss 03an40 0.8 600 Coss Crss 1.2 -100 0 100 Tj (C) 200 0 0 5 10 15 VDS(-V) 20 ID = -250 A; VDS = VGS VGS = 0 V; f = 1 MHz Fig 9. Gate-source threshold voltage as a function of junction temperature; typical values. Fig 10. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 32 IS (-A) 24 03am07 6 VGS (-V) 4 03am03 16 Tj = 25 C 2 8 0 0 0.4 0.8 VSD (-V) 1.2 0 0 4 8 12 QG (nC) 16 VGS = 0 V ID = -6.5 A; VDD = -15 V Fig 11. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 12. Gate-source voltage as a function of gate charge; typical values. 9397 750 11549 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev. 01 -- 15 January 2004 7 of 11 Philips Semiconductors PMK27XP P-channel extremely low level FET 7. Package outline SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y HE vMA Z 8 5 Q A2 pin 1 index Lp 1 e bp 4 wM L detail X A1 (A 3) A 0 2.5 scale 5 mm DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches Notes 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. OUTLINE VERSION SOT96-1 REFERENCES IEC 076E03 JEDEC MS-012 JEITA EUROPEAN PROJECTION A max. 1.75 0.069 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 5.0 4.8 0.20 0.19 E (2) 4.0 3.8 0.16 0.15 e 1.27 0.05 HE 6.2 5.8 L 1.05 Lp 1.0 0.4 Q 0.7 0.6 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z (1) 0.7 0.3 0.028 0.012 0.010 0.057 0.004 0.049 0.019 0.0100 0.014 0.0075 0.244 0.039 0.028 0.041 0.228 0.016 0.024 8 0o o ISSUE DATE 99-12-27 03-02-18 Fig 13. SOT96-1 (SO8). 9397 750 11549 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev. 01 -- 15 January 2004 8 of 11 Philips Semiconductors PMK27XP P-channel extremely low level FET 8. Revision history Table 6: Rev Date 01 20040115 Revision history CPCN Description Product data (9397 750 11549). 9397 750 11549 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev. 01 -- 15 January 2004 9 of 11 Philips Semiconductors PMK27XP P-channel extremely low level FET 9. Data sheet status Level I II Data sheet status[1] Objective data Preliminary data Product status[2][3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 12. Trademarks TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V. 11. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. 9397 750 11549 Fax: +31 40 27 24825 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev. 01 -- 15 January 2004 10 of 11 Philips Semiconductors PMK27XP P-channel extremely low level FET Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 (c) Koninklijke Philips Electronics N.V. 2004. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 15 January 2004 Document order number: 9397 750 11549 |
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